Semiconductor Devices · Exam E
Final Exam
MOS Deep Dive
Four parts · Band bending · C–V (HF/LF) · Threshold · MOSFET I–V
Instructions
- Each part begins with short conceptual questions, then longer problem-solving questions — budget ~30 min per part.
- Type working in the answer box; toggle LaTeX to render any equation live (e.g.
V_T=V_{FB}+2\phi_f+\frac{|Q_{dep}|}{C_{ox}}). - Try each problem fully before hitting Show solution. Numerical answers use the constants below.
Physical constants & quick formulas
$n_i = 1.5\times10^{10}\ \mathrm{cm^{-3}}$
$kT/q = 0.0259\ \mathrm{V}$
$q = 1.6\times10^{-19}\ \mathrm{C}$
$\varepsilon_0 = 8.85\times10^{-14}\ \mathrm{F/cm}$
$\varepsilon_{Si} = 1.04\times10^{-12}\ \mathrm{F/cm}$
$\varepsilon_{ox} = 3.45\times10^{-13}\ \mathrm{F/cm}$
$K_s = 11.7,\ K_{ox} = 3.9$
$N_C = 2.8\times10^{19},\ N_V = 1.04\times10^{19}$
$\chi_{Si} = 4.05\ \mathrm{eV}$