Stanford · Semiconductor Devices
EE116 Final
Practice Suite
Five full mock exams with figures, live LaTeX answers, and worked solutions
Exam A
Practice Test
The core set: conceptual short-answers plus four worked numerical problems, now with device figures.
Exam B
Mock Test
A second sitting with all-new numbers and a figure in every part — closest to a real exam run.
Exam C
Fundamentals
Crystal structure, carrier statistics, equilibrium bands, and junction electrostatics — the early-course foundations.
Exam D
Diode Dynamics
Forward IV, injection profiles, small-signal capacitance, switching transients, and optoelectronics.
Exam E
MOS Deep Dive
Band bending, HF/LF C–V, threshold with work function & oxide charge, and full MOSFET I–V.
Crystal & Bands · PN Diode · Schottky · MOS Capacitor · MOSFET · Optoelectronics